Description
This Power MOSFET is produced using Msemitek‘s advanced planar stripe DMOS technology.
Features
- - 9A, 900V, RDS(on) typ. = 975mΩ@VGS = 10 V - Low gate charge ( typical 80nC) - Low Crss ( typical 36pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
G
G D S
TO-220F
G D S
TO-247
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Av.
SLF9N90C-Msemitek.pdf
