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1165892 High power NPN silicon power transistors

1165892 Description

1165892 High power NPN silicon power transistors.These devices are designed for linear amplifiers, series pass regulators, and inductive switching a.

1165892 Features

* Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc.
* Pb-free packages. (TO-3) Style 1: Pin 1. Base 2. Emitter Collector (Case) Dimensions Minimum Maximum A 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6.35) 0.335 (8.51) D 0.038 (0.97)

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Datasheet Details

Part number
1165892
Manufacturer
Multicomp
File Size
293.89 KB
Datasheet
1165892-Multicomp.pdf
Description
High power NPN silicon power transistors

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