2N6476 - Bipolar Transistor

Multicomp

Datasheet Details

The 2N6476, PNP General Purpose, medium power silicon transistor in a TO-220 type package designed for switching and amplifier applications.

Low Saturation Voltage Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage (RBB = 1≤00Ω, VBB = 0) Collector-Emitter Voltage Emitter Base Current Continuous Collector Current (TC% + 106°C) Continuous Base Current (TC% + 130°C) Total Device Dissipation -(TC = +100°C), Derate Linearly Above 100°C Total Device Dissipation -(TC = +25°C), Derate Linearly Above 25°C Total Device Dissipation -(TA = +25°C), Derate Linearly Above 25°C Operating Junction Temperatur.

📁 2N6476 Similar Datasheet

Other Datasheets by Multicomp

Published: May 16, 2017 |