* High Power Dissipation PD = 150W (TC = 25°C).
* High DC Current Gain and Low Saturation Voltage hFE = 15 - 60 at IC = 8A, VCE = 4V VCE(SAT) = 1.4V (Maximum) at IC = 8A, IB = 0.8A. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23
2N6609
Multicomp
348.81 KB
Complementary power transistor.
2N3773, 6609 Complementary Power Transistors The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positione.
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