Part number:
2N6609
Manufacturer:
Multicomp
File Size:
348.81 KB
Description:
Complementary power transistor.
2N6609 Features
* High Power Dissipation PD = 150W (TC = 25°C).
* High DC Current Gain and Low Saturation Voltage hFE = 15 - 60 at IC = 8A, VCE = 4V VCE(SAT) = 1.4V (Maximum) at IC = 8A, IB = 0.8A. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23
Datasheet Details
2N6609
Multicomp
348.81 KB
Complementary power transistor.
📁 Related Datasheet
2N6603 HIGH FREQUENCY TRANSISTOR (Motorola)
2N6604 HIGH FREQUENCY TRANSISTOR (Motorola)
2N6609 COMPLEMENTARY POWER TRANSISTORS (ON Semiconductor)
2N6609 COMPLEMENTARY SILICON POWER TRANSITORS (Central Semiconductor)
2N6609 Silicon PNP Transistor (NTE)
2N6609 Silicon PNP Power Transistor (Inchange Semiconductor)
2N6620 NPN SILICON TRANSISTOR (Siemens)
2N6648 PNP Silicon Power Darlington Transistors (VPT)
2N6609 Distributor