TIP131 - Darlington Transistors

Multicomp

Datasheet Details

Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137.
Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A.
Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J.

📁 TIP131 Similar Datasheet

TIP131G - Silicon Power Transistors (ON Semiconductor)
TIP130 - Silicon NPN Darlington Power Transistors (SavantIC)
TIP132 - Silicon NPN Darlington Power Transistors (SavantIC)
TIP132G - Silicon Power Transistors (ON Semiconductor)
TIP135 - PNP SILICON POWER DARLINGTONS (Power Innovations Limited)
TIP136 - PNP SILICON POWER DARLINGTONS (Power Innovations Limited)
TIP137 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (STMicroelectronics)
TIP137G - Silicon Power Transistors (ON Semiconductor)

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Published: Oct 25, 2016 |