• Part: NCE8580
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power
  • Size: 333.56 KB
Download NCE8580 Datasheet PDF
NCE Power
NCE8580
Description The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features - VDS =85V,ID =80A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Special designed for convertors and power controls - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram Marking and pin assignment Application - Power switching application - Hard switched and High frequency circuits - Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise...