NCE8580 - N-Channel Enhancement Mode Power MOSFET

NCE Power

Datasheet Details

The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =85V,ID =80A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Special designed for convertors and power controls.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram Marking and pin assignment Application.
Power switching application.
Hard switched and.

📁 Related Datasheet

NCE8580D - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE85H21C - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE85H21TC - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE85H35TC - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE8010S - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE8050 - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE8050A - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE8050AK - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

📌 All Tags

NCE Power NCE8580-like datasheet

NCE8580 Stock/Price