Description
( DataSheet : www.DataSheet4U.com ) DATA SHEET SILICON POWER TRANSISTOR 2SA1646, 2SA1646-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING .
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.
Features
* a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for highcurrent switching. PACKAGE DRAWING (UNIT: mm)
FEATURES
* Mold
Applications
* ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Conditions
Ratings Unit
Collector to base voltage
VCBO
* 150
V
Collector to emitter voltage VCEO
* 100
V
Emitter to base voltage
VEBO
* 7.0 V
Collector current
ID(DC)
* 10 A
Collector current
IC(pu