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2SC4095 NPN SILICON EPITAXIAL TRANSISTOR

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Description

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD .
The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.

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Datasheet Specifications

Part number
2SC4095
Manufacturer
NEC
File Size
107.18 KB
Datasheet
2SC4095_NEC.pdf
Description
NPN SILICON EPITAXIAL TRANSISTOR

Features

* excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values. excellent associated gain and very wide dynamic range.

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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