2SK1658 - N-Channel MOSFET
2SK1658 Features
* Directly driven by ICs having a 3 V power supply.
* Has low Gate Leakage Current IGSS = ±5 nA MAX. (VGS = ±3.0 V) G 0.9 ±0.1 Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(puls
