2SK3111 Datasheet | NEC

DESCRIPTION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. ORDERING INFORMATION PART NUMBER 2SK3111 2SK3111-S 2SK3111-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES - Gate voltage rating ±30 V - Low on-state resistance RDS(on) = 180 mΩ MAX. (VGS = 10 V, ID = 10 A) - Low input capacitance Ciss = 1000 p F TYP. (VDS = 10 V, VGS = 0 V) - Avalanche capability rated - Built-in gate protection diode - Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to source voltage (VGS = 0 V) Gate to source voltage (VDS = 0 V) Drain current (DC) (TC = 25 °C) Drain current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 200 ±30 ±20 ±60 1.5 65 150 - 55 to +150 20 100 V V A A W W °C °C A m J Total power dissipation (TA = 25 °C) Total power dissipation (TC = 25 °C) Channel temperature Storage temperature Single avalanche current Single avalanche energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13334EJ1V0DS00 (1st edition) Date Published January 2000 NS CP (K) Printed in Japan The mark 5 shows major revised points. © 1998, 2000 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Characteristics Drain Leakage Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode...