* Super low on-state resistance: 5 5 RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9 mΩ MAX. (VGS = 4 V, ID = 42 A)
* Low Ciss: Ciss = 9500 pF TYP.
* Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to
2SK3432
NEC
48.41 KB
N-channel mosfet.
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3432 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3432.
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