2SK3811 Datasheet | NEC

DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3811-ZP PACKAGE TO-263 (MP-25ZP) FEATURES - Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) - High Current Rating: ID(DC) = ±110 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±110 ±440 213 1.5 150 - 55 to +150 518 72 518 V V A A W W °C °C m J A m J Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy Note2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. RG = 25 Ω, Tch(peak) ≤ 150°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16737EJ1V0DS00 (1st edition) Date Published June 2004 NS CP(K) Printed in Japan ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 m A VDS = 10 V, ID = 55 A VGS = 10 V, ID = 55 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 20 V, ID = 55 A VGS = 10 V RG = 0 Ω MIN. TYP. MAX. 10 ±100 UNIT µA n A V S 2.0 45 3.0 89 1.4 17700 2200 1300 54 140 130 21 Drain to Source On-state Resistance...