* 0.95 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Gate to Drain Voltage Gate to Source Voltage Drain to Source Voltage (VGS =
* 4.0 V) Drain Current (DC) Gate Current (DC) Total Power Dissipation Junction Temperature Storage Temperature VGDO VGSO VDSX ID IG PT Tj Tstg
* 15
* 15 1
2SK508
NEC
340.26 KB
N-channel mosfet.
DATA SHEET
www.DataSheet4U.com
JUNCTION FIELD EFFECT TRANSISTOR
2SK508
HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR.
📁 Related Datasheet
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(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
2SK508
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3
DESCRIPTION
The.
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PRODUCT SUMMARY
VDS (V)
RDS(on) () Typ.
0.046 at VGS = - 10 V
- 30
0.049 at VGS = - .
2SK521 - Silicon N-Channel FET
(Hitachi)
.
