Datasheet4U Logo Datasheet4U.com

C3587 - 2SC3587

Key Features

  • Low noise : NF = 1.7 dB TYP. @ f = 2 GHz C 3.8 MIN. 3.8 MIN. B NF = 2.6 dB TYP. @ f = 4 GHz.
  • High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz 3.8 MIN. 45 °.

📥 Download Datasheet

Datasheet Details

Part number C3587
Manufacturer NEC
File Size 109.88 KB
Description 2SC3587
Datasheet download datasheet C3587 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
C3581 2SC3581 Isahaya Electronics Corporation
C350 Phase Control SCR Powerex Power Semiconductors
C3500 Silicon Power Transistor ETC
C3502 2SC3502 Sanyo Semicon Device
C3503 2SC3503 Sanyo Semicon Device

Other Datasheets by NEC

Part Number Description
C358C UPC358
C3568 2SC3568
C3570 2SC3570

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.DataSheet4U.com SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN. FEATURES • Low noise : NF = 1.7 dB TYP. @ f = 2 GHz C 3.8 MIN. 3.8 MIN. B NF = 2.6 dB TYP. @ f = 4 GHz • High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz 3.8 MIN.