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C5177 - 2SC5177

C5177 Description

DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION .

C5177 Features

* Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4
* 0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65
* 0.15 +0.1
* Mini-Mold package EIAJ: SC-59 0.95 O

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Datasheet Details

Part number
C5177
Manufacturer
NEC
File Size
55.01 KB
Datasheet
C5177-NEC.pdf
Description
2SC5177

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2SC5177 NEC
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