Description
DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING .
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.
Features
* Gate drive available at logic level (VGS =
* 4 V)
* High current control available in small
dimension due to low RDS(on) (≅ 0.45 Ω)
* 2SJ133-Z is a lead process product and is deal
for mounting a hybrid IC. QUALITY GRADES
* Standard
Please refer to “Quality G
Applications
* ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to source voltage
VDSS
VGS = 0
Gate to source voltage
VGSS
VDS = 0
Drain current (DC) Drain current (pulse)
ID(DC) ID(pulse)
TC = 25°C
PW ≤ 300 µs duty cycle ≤ 10 %
Total power dissipation
PT TC = 25°C
Total powe
