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J649 Datasheet - NEC

J649 2SJ649

J649 Features

* Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS =

* 10 V, ID =

* 10 A) RDS(on)2 = 75 mΩ MAX. (VGS =

* 4.0 V, ID =

* 10 A)

* Low input capacitance: Ciss = 1900 pF TYP. (VDS =

* 10 V, VGS = 0 V)

* Built-in gate protection diode (Isolated

J649-NEC.pdf

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Datasheet Details

Part number:

J649

Manufacturer:

NEC

File Size:

125.48 KB

Description:

2sj649.

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