* Low On-Resistance
RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)
4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3
* Low Ciss Ci.
3.0 ±0.3
PACKAGE DIMENSIONS
(in millimeter) 10.6 MAX. 10.0
5.9 MIN. 12.7 MIN. 15.5 MAX.
3.6 ±0.2
4.8 MAX. 1.3 ±0.2
.
The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
3.0 ±0.3
PACKAGE DIMENSIONS
(in millimeter) 10.6 MAX. 10.0
5.9 MIN. 12.7 MIN. 15.5 MAX.
3.6 ±0.2
4.8 MAX. 1.3 ±0.2
FEATURES
* Low On-Resista.
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