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UPC1658G-E1 LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER

UPC1658G-E1 Description

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1658G LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER .
The µPC1658G is a silicon monolithic integrated circuit designed as amplifier for high frequency system applications.

UPC1658G-E1 Features

* Low noise figure resistance constants. : GP ≥ 40 dB @ Without negative feedback resistor : GP ≥ 18 dB @ With negative feedback resistor
* Wideband response : f3dB = 1.0 GHz @ GP = 18 dB
* External resistor can vary the collector current of the final transistor in the IC to

UPC1658G-E1 Applications

* Bandwidth and output power level can be determined according to external resistor constants of negative feedback and final stage collector. This IC is available in 8-pin plastic SOP. This IC is manufactured using NEC’s 10 GHz fT NESATTM II silicon bipolar process. This process uses silicon nitride

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Datasheet Details

Part number
UPC1658G-E1
Manufacturer
NEC
File Size
73.20 KB
Datasheet
UPC1658G-E1_NEC.pdf
Description
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER

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LOW NOISE HIGH FREQUENCY MMIC AMPLIFIER NEC
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