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UPC1679G-E1 5 V-BIAS/ +5.5 dBm OUTPUT/ 1.8 GHz WIDEBAND Si MMIC AMPLIFIER

UPC1679G-E1 Description

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1679G 5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER .
The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications.

UPC1679G-E1 Features

* Supply voltage
* Saturated output power
* Wideband response
* Isolation
* Power Gain : VCC = 4.5 to 5.5 V : PO(sat) = +15.5 dBm TYP. @ f = 500 MHz with external inductor : fu = 1.8 GHz TYP. @ 3 dB bandwidth : ISL = 34 dB TYP. @ f = 500 MHz : GP = 21.5 dB TYP

UPC1679G-E1 Applications

* Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESATTMIV silicon bipolar process. This process uses silicon nitride passiv

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Datasheet Details

Part number
UPC1679G-E1
Manufacturer
NEC
File Size
73.63 KB
Datasheet
UPC1679G-E1_NEC.pdf
Description
5 V-BIAS/ +5.5 dBm OUTPUT/ 1.8 GHz WIDEBAND Si MMIC AMPLIFIER

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📌 All Tags

V-BIAS +5.5 dBm OUTPUT 1.8 GHz WIDEBAND MMIC AMPLIFIER NEC
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