UPC805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

NEC

Description

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MO.

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Datasheet Specifications

Part number: UPC805T
Manufacturer: NEC
File Size: 57.78 KB
Datasheet: UPC805T_NEC.pdf
Description: MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

Features

* Low Noise, High Gain
* Operable at Low Voltage
* Small Feed-back Capacitance Cre = 0.3 pF TYP.
* Built-in 2 Transistors (2 × 2SC4958) PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 0.65 0.65 2.0±0.2 1.3 2 ORDERING INFORMATION PART NUMBER QUANTITY Loose products

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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UPC805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN ELEMENTS MINI MOLD NEC

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