UPC805T
UPC805T is MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD manufactured by NEC.
FEATURES
- Low Noise, High Gain
- Operable at Low Voltage
- Small Feed-back Capacitance Cre = 0.3 p F TYP.
- Built-in 2 Transistors (2 × 2SC4958)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1 1.25±0.1
0.65 0.65
2.0±0.2
ORDERING INFORMATION
PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
0.9±0.1
µPA805T
µPA805T-T1
Taping products (3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation SYMBOL VCBO VCEO VEBO IC PT RATING 9 6 2 10 60 in 1 element 120 in 2 elements Note 150
- 65 to +150 UNIT V V V m A m W
6 Q1
0~0.1
Q2
PIN CONNECTIONS 1. Collector (Q1) 4. Emitter (Q2) 2. Emitter (Q1) 5. Base (Q2) 3. Collector (Q2) 6. Base (Q1)
Junction Temperature Storage Temperature
Tj Tstg
˚C ˚C
Note 110 m W must not be exceeded in 1...
