UPD4443362
NEC
113.77kb
4m-bit cmos synchronous fast static ram 128k-word by 36-bit hstl interface. The µPD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-tran
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UPD444 - 1024 x 4-Bit Static CMOS RAM
(NEC)
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UPD444-1 - 1024 x 4-Bit Static CMOS RAM
(NEC)
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UPD444-2 - 1024 x 4-Bit Static CMOS RAM
(NEC)
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UPD444-3 - 1024 x 4-Bit Static CMOS RAM
(NEC)
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UPD444001 - 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444001
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT
Description
The µPD444001 is a high speed, low power, 4,194,304.
UPD444004 - 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444004
4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
Description
The µPD444004 is a high speed, low power, 4,194,304.
UPD444004L - 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444004L
4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
Description
The µPD444004L is a high speed, low power, 4,194,3.
UPD444008 - 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444008
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
Description
The µPD444008 is a high speed, low power, 4,194,3.
UPD444008L - 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444008L
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
Description
The µPD444008L is a high speed, low power, 4,194.
UPD444012A-X - 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444012A-X
4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Description
The µPD444012A-.