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UPD4482161 (UPD4482161/2181/2321/2361) 8M-BIT CMOS SYNCHRONOUS FAST SRAM

UPD4482161 Description

DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION .
The µPD4482161 is a 524,288-word by 16-bit, the µPD4482181 is a 524,288-word by 18-bit, the µPD4482321 is a 262,144-word by 32-bit and the µPD4482361.

UPD4482161 Features

* 3.3 V or 2.5 V core supply
* Synchronous operation
* Operating temperature : TA = 0 to 70 °C (-A65, -A75, -A85, -C75, -C85) TA =
* 40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)
* Internally self-timed write control
* Burst read / write : Interleave

UPD4482161 Applications

* which require synchronous operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory. ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In the “Sleep” state, the SRAM internal state is pres

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Datasheet Details

Part number
UPD4482161
Manufacturer
NEC
File Size
370.77 KB
Datasheet
UPD4482161_NEC.pdf
Description
(UPD4482161/2181/2321/2361) 8M-BIT CMOS SYNCHRONOUS FAST SRAM

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📌 All Tags

UPD4482161 2181 2321 2361 8M-BIT CMOS SYNCHRONOUS FAST SRAM NEC
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