UPD4482161 (UPD4482161/2181/2321/2361) 8M-BIT CMOS SYNCHRONOUS FAST SRAM

NEC

Description

DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION .
The µPD4482161 is a 524,288-word by 16-bit, the µPD4482181 is a 524,288-word by 18-bit, the µPD4482321 is a 262,144-word by 32-bit and the µPD4482361.

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Datasheet Specifications

Part number: UPD4482161
Manufacturer: NEC
File Size: 370.77 KB
Datasheet: UPD4482161_NEC.pdf
Description: (UPD4482161/2181/2321/2361) 8M-BIT CMOS SYNCHRONOUS FAST SRAM

Features

* 3.3 V or 2.5 V core supply
* Synchronous operation
* Operating temperature : TA = 0 to 70 °C (-A65, -A75, -A85, -C75, -C85) TA =
* 40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)
* Internally self-timed write control
* Burst read / write : Interleave

Applications

* which require synchronous operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory. ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In the “Sleep” state, the SRAM internal state is pres

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UPD4482161 UPD4482161 2181 2321 2361 8M-BIT CMOS SYNCHRONOUS FAST SRAM NEC

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