UPG2156TB L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH

NEC

Description

DATA SHEET www.DataSheet4U.com GaAs INTEGRATED CIRCUIT µPG2156TB L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH .
The µPG2156TB is an L-band single control SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application.

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Datasheet Specifications

Part number: UPG2156TB
Manufacturer: NEC
File Size: 125.17 KB
Datasheet: UPG2156TB_NEC.pdf
Description: L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH

Features

* Low insertion loss : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1 : LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT2 : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz, IN-OUT1/2
* High power switching : Pin (0.1 dB) = 37 dBm TYP. @ Vcont = +2.6

Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

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UPG2156TB L-BAND SINGLE CONTROL HIGH POWER SPDT SWITCH NEC

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