S6R2008W1A Datasheet - NETSOL

S6R2008W1A 2M Async FAST SRAM

The S6R2016(V/C/W)1A and S6R2008(V/C/W))1A are a 2,097,152-bit high-speed Static Random Access Memory organized as 128K (256K) words by 16(8) bits. The S6R2016(V/C/ W)1A (S6R2008(V/C/W)1A) uses 16(8) common input and output lines and have an output enable pin which operates faster than address acces.

S6R2016V1A, S6R2016C1A, S6R2016W1A S6R200186V1A, S6R200186C1A, S6R200186W1A S6R2008V1A, S6R2008C1A, S6R2008W1A 2M Async FAST SRAM 2M Async FAST SRAM 2Mb Async. FAST SRAM Specification NETSOL RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed .

S6R2008W1A Features

* Fast Access Time 8, 10, 12, 15ns(Max)

* CMOS Low Power Dissipation Standby (TTL) : 10mA (Max.) (CMOS) : 6mA (Max.) Operating : 35mA (8ns, Max.) 30mA (10ns, Max.)

* Single 3.3 ±0.3V or 5.0 ±0.5V Power Supply - S6R20xxV1A : 3.3 ±0.3V Power Supply - S6R20xxC1A : 5.0 ±0.5V Powe

S6R2008W1A Datasheet (343.29 KB)