PG7A10BD, PG7A10BD-NIKO Datasheet - NIKO-SEM

PG7A10BD N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode PG7A10BD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 7.4mΩ ID 77A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C VDS VGS ID IDM PD TJ, Tstg 1. GATE 2. .

PG7A10BD-NIKO-SEM.pdf

PG7A10BD Datasheet Preview — This datasheet PDF includes multiple part numbers: PG7A10BD, PG7A10BD-NIKO. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

PG7A10BD, PG7A10BD-NIKO

Manufacturer:

NIKO-SEM

File Size:

73.61 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: PG7A10BD, PG7A10BD-NIKO.
Please refer to the document for exact specifications by model.

PG7A10BD Distributor

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TAGS

PG7A10BD PG7A10BD-NIKO N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM