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PR802BA33 Datasheet - NIKO-SEM

PR802BA33 N-Channel Enhancement Mode Field Effect Transistor

PR802BA33 Features

* Halogen Free and RoHS compliant.

* Low RDS(on) to Minimize Conduction Losses.

* Ohmic Region Good RDS(on) Ratio.

* Optimized Gate Charge to Minimize Switching Losses.

* 100% UIS Tested & 100% Rg Tested.

* Patent No. US9,947,551. D G S PR802BA33 Pow

Datasheet Details

PR802BA33

NIKO-SEM

330.08 KB

N-channel enhancement mode field effect transistor.

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