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PR802BA33, PR802BA33-NIKO N-Channel Enhancement Mode Field Effect Transistor

PR802BA33 Description

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4mΩ ID 74A .

PR802BA33 Features

* Halogen Free and RoHS compliant.
* Low RDS(on) to Minimize Conduction Losses.
* Ohmic Region Good RDS(on) Ratio.
* Optimized Gate Charge to Minimize Switching Losses.
* 100% UIS Tested & 100% Rg Tested.
* Patent No. US9,947,551. D G S PR802BA33 Pow

PR802BA33 Applications

* Protection Circuits Applications.
* Computer for DC to DC Converters Applications. G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PR802BA33, PR802BA33-NIKO. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PR802BA33, PR802BA33-NIKO
Manufacturer
NIKO-SEM
File Size
330.08 KB
Datasheet
PR802BA33-NIKO-SEM.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: PR802BA33, PR802BA33-NIKO.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
NIKO-SEM PR802BA33-like datasheet