Description
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4mΩ ID 74A .
Features
* Halogen Free and RoHS compliant.
* Low RDS(on) to Minimize Conduction Losses.
* Ohmic Region Good RDS(on) Ratio.
* Optimized Gate Charge to Minimize Switching Losses.
* 100% UIS Tested & 100% Rg Tested.
* Patent No. US9,947,551.
D
G S
PR802BA33
Pow
Applications
* Protection Circuits Applications.
* Computer for DC to DC Converters Applications. G. GATE D. DRAIN S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain
