HJR4102E

Relays

NINGBO TIANBO GANGLIAN ELECTRONICS

HJR4102E Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistanc

HJR4102E General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S 1 8 D IDM PD TJ, TSTG EAS S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA = 40°C/W on a 1-inch2 , 2-oz. Cu pad on a 0.06inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cyc.

HJR4102E Datasheet (253.59 KB)