34PM-C101
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34PM-C108 - Motors
(NMB)
hybrid
34PM-C
LEAD WIRE AWG#22 UL 3266 11.8 (300) MIN
1.8º
.063 (1.59) .187 (4.76)
.3750+ -.0005 0 (9.525 -0.013 )
.0000
2.875 + - .002 ( 73.025+ -.
34PM-C007 - Motors
(NMB)
hybrid
34PM-C
LEAD WIRE AWG#22 UL 3266 11.8 (300) MIN
1.8º
.063 (1.59) .187 (4.76)
.3750+ -.0005 0 (9.525 -0.013 )
.0000
2.875 + - .002 ( 73.025+ -.
34PM-C049 - Motors
(NMB)
hybrid
34PM-C
LEAD WIRE AWG#22 UL 3266 11.8 (300) MIN
1.8º
.063 (1.59) .187 (4.76)
.3750+ -.0005 0 (9.525 -0.013 )
.0000
2.875 + - .002 ( 73.025+ -.
3400 - 5-Series Chipset
(Intel)
Intel® 5 Series Chipset and Intel® 3400 Series Chipset
Datasheet
January 2012
Document Number: 322169-004
INFORMATION IN THIS DOCUMENT IS PROVIDED IN.
3400 - N-Channel MOSFET
(GOFORD)
GOFORD
DESCRIPTION
The 3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as .
3400 - N-Channel MOSFET
(Doingter)
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a w.
3401 - P-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM3401
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.
3401 - P-Channel MOSFET
(CXW)
P-channel Enhancement Mode MOSFET
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. Thi.
3401 - P-channel-enhanced MOS field-effect transistor
(ChipSourceTek)
3401
RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP
P MOS
1
SOT-23
D
Drain
D
3
k 1
2
e G
S
.
3401 - MOSFET
(GFD)
3401
DESCRIPTION
The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2..
