NTE906 Datasheet | NTE Electronics

Description : The NTE906 is an integrated circuit in a 12- Lead TO5 type package consisting of two independent differential amplifiers with associated constant- current transistors on a mon monolithic substrate. The six transistors which prise the amplifiers are general- purpose devices which exhibit low 1/f noise and a value of f T in excess of 1GHz. These features make the NTE906 useful from DC to 500MHz. Bias and load resistors have been omitted to provide maximum application flexibility. The monolithic construction of the NTE906 provides close electrical and thermal matching of the amplifiers. This feature makes this device particularly useful in dual- channel applications where matched performance of the two channels is required. Features : D Power Gain: 23d B (Typ) @ 200MHz D Noise Figure: 4.6d B (Typ) @ 200MHz D Two Different Amplifiers on a mon Substrate D Independently Accessible Input and Outputs Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD Any One Transistor - - - - - - - - - - - 300m W Total Package - - - - - - - - - - - . . . . 600m W Derate Above +55°C - - - - - - - - - - . 5m W/°C Operating Temperature Range, Topr - - - - - - - - - 55° to +125°C Storage Temperature Range, Tstg - - - - - - - - . . - 65° to +150°C The following ratings apply for each transistor: Collector- Emitter Voltage, VCEO - - - - - - - - - - . . . . 15V Collector- Base Voltage, VCBO - - - - - - - - -...