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2N6052

Silicon PNP Transistor

2N6052 Features

* D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built

* In Base

* Emitter Shunt Resistors Absolute Maximum Ratings: Collector

* Emitter Voltage, VCEO . . . . . . . . . . .

2N6052 Datasheet (65.35 KB)

Preview of 2N6052 PDF

Datasheet Details

Part number:

2N6052

Manufacturer:

NTE

File Size:

65.35 KB

Description:

Silicon pnp transistor.

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2N6052 Silicon PNP Transistor NTE

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