Datasheet4U.com

2N6052 - Silicon PNP Transistor

NTE

📥 Download Datasheet

2N6052 Datasheet Preview — Preview of 2N6052 PDF

datasheet Preview Page 2

Datasheet Details

Part number	2N6052
Manufacturer	NTE
File Size	65.35 KB
Description	Silicon PNP Transistor
Datasheet	2N6052-NTE.pdf

2N6052 Product details

Description

The 2N6052 is a silicon PNP Darlington transistor in a TO 3 type case designed for general purpose amplifier and low frequency switching applications.

Features

D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base Voltage, VCB.

📁 2N6052 Similar Datasheet

2N6050 - Bipolar PNP Device (Seme LAB)
2N6051 - PNP Darlington Power Silicon Transistor (VPT)
2N6053 - PNP Transistor (DIGITRON)
2N6054 - Darlington Transistor (Multicomp)
2N6055 - (2N6055 / 2N6056) Silicon Power Transistor (SavantIC)
2N6056 - NPN Darlington Silicon Power Transistor (ON Semiconductor)
2N6057 - Bipolar NPN Device (Seme LAB)
2N6058 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)

Other Datasheets by NTE

2N6059 - Silicon NPN Transistor
2N6028 - Programmable Unijunction Transistor
2N6107 - Silicon PNP Transistor
2N6109 - Silicon PNP Transistor
2N6123 - Silicon NPN Transistor
2N6125 - Silicon PNP Transistor

Published: Jul 5, 2020 |