2N6052 Datasheet, Transistor, NTE

2N6052 Features

• Transistor D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector
• Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built
• In Base
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Part number:

2N6052

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NTE

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📄 Datasheet

Description:

Silicon pnp transistor. The 2N6052 is a silicon PNP Darlington transistor in a TO

3 type case designed for general

purpose amplifier and low

2N6052 Application

• Applications Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector
• Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100

TAGS

2N6052

NTE

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