BDV65 Datasheet - NTE

BDV65 Silicon NPN Transistors

BDV65 Features

* D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Collector

* Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built

* In Base

* Emitter Shunt Resistor Absolute Maximum Ratings: Collector

* Emitter Voltage, VCEO . .

Datasheet Details

BDV65

NTE

61.95 KB

Silicon npn transistors.

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BDV65 Silicon NPN Transistors NTE

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