MJE172 - Silicon PNP Transistor

Product Overview

NTE

MJE172 Silicon PNP Transistor by NTE - Datasheet Preview — Datasheet preview – MJE172

Datasheet Details

Part number	MJE172
Manufacturer	NTE
File Size	63.46 KB
Description	Silicon PNP Transistor
Datasheet	MJE172 Datasheet
Additional preview pages of the MJE172 datasheet.

Product details

Description

The MJE172 is a silicon PNP transistor in a TO 126 type package designed for low power audio amplifier and low current, high speed switching applications.

Features

D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 80V D DC Current Gain: hFE = 30 (Min) @ IC = 0.5A hFE = 12 (Min) @ IC = 1.5A D Current.
Gain.
Bandwidth Product: fT = 50MHz (Min) @ IC = 100mA D Annular Construction for Low Leakage: ICBO = 100nA (Max) @ VCB = 100V Absolute Maximum Ratings: Collector.
Base Voltage, VCB.
. 100V Collector.
Emitter Voltage, VCEO.

📁 Similar Datasheet

MJE172G - Complementary Plastic Silicon Power Transistors (ON Semiconductor)
MJE170 - PNP PLASTIC POWER TRANSISTORS (CDIL)
MJE170G - Complementary Plastic Silicon Power Transistors (ON Semiconductor)
MJE171 - PNP Transistor (SeCoS)
MJE171G - Complementary Plastic Silicon Power Transistors (ON Semiconductor)
MJE105 - 5 Ampere Power Transistor (Motorola)
MJE105K - 5 Ampere Power Transistor (ETC)
MJE1100 - Transistor (Motorola Semiconductor)

Other Datasheets by NTE

MJE13005 - Silicon NPN Transistor
MJE13006 - Silicon NPN Transistor
MJE13007 - Silicon NPN Transistor
MJE15030 - Silicon Complementary Transistors
MJE15031 - Silicon Complementary Transistors
MJE180 - Silicon NPN Transistor

Published: Dec 15, 2022 |