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NTE10 - Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier

Datasheet Summary

Features

  • D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) D High Power Gain: MAG = 14dB Typ (f = 0.9GHz) D High Cutoff Frequency: fT = 5GHz Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Base Voltage, VCBO.
  • 20V Collector.
  • Emitter Voltage, VCER.
  • . . . . 12V Emitter.
  • B.

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Datasheet Details

Part number NTE10
Manufacturer NTE
File Size 20.68 KB
Description Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
Datasheet download datasheet NTE10 Datasheet
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Full PDF Text Transcription

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NTE10 Silicon NPN Transistor UHF Low Noise Wide–Band Amplifier Features: D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) D High Power Gain: MAG = 14dB Typ (f = 0.9GHz) D High Cutoff Frequency: fT = 5GHz Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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