NTE190 Datasheet, Amplifier, NTE

NTE190 Features

• Amplifier D High Collector
    –Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA D Low Collector
    –Emitter Saturation Voltatge: VCE(sat) = 0.5V (Max) @ IC = 2

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Part number:

NTE190

Manufacturer:

NTE

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📄 Datasheet

Description:

Silicon npn transistor high voltage amplifier. The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplif

NTE190 Application

• Applications high voltage linear amplifiers, and high voltage transistor regulators. Features: D High Collector
    –Emitter Breakdown V

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