NTE190 Silicon NPN Transistor High Voltage Amplifier

NTE

Description

NTE190 Silicon NPN Transistor High Voltage Amplifier .
The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high vo.

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Datasheet Specifications

Part number: NTE190
Manufacturer: NTE
File Size: 22.71 KB
Datasheet: NTE190_NTEElectronics.pdf
Description: Silicon NPN Transistor High Voltage Amplifier

Features

* D High Collector
* Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA D Low Collector
* Emitter Saturation Voltatge: VCE(sat) = 0.5V (Max) @ IC = 200mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector
* Emitter Voltage, VCEO

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NTE190 Silicon NPN Transistor High Voltage Amplifier NTE

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