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NTE197 - Silicon Complementary Transistors

This page provides the datasheet information for the NTE197, a member of the NTE196 Silicon Complementary Transistors family.

Datasheet Summary

Description

The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications.

Features

  • D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current.
  • Gain Bandwidth Product: fT = 4MHz Min @ IC = 500mA (NTE196) = 10MHz Min @ IC = 500mA (NTE197) Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 70V Collector.
  • Base Voltage, VCB.

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Datasheet preview – NTE197

Datasheet Details

Part number NTE197
Manufacturer NTE
File Size 24.27 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE197 Datasheet
Additional preview pages of the NTE197 datasheet.

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Full PDF Text Transcription

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NTE196 (NPN) & NTE197 (PNP) Silicon Complementary Transistors Audio Power Output and Medium Power Switching Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current–Gain Bandwidth Product: fT = 4MHz Min @ IC = 500mA (NTE196) = 10MHz Min @ IC = 500mA (NTE197) Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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