Part number:
NTE359
Manufacturer:
NTE
File Size:
98.18 KB
Description:
Silicon npn transistor rf & microwave transistor.
* Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances Absolute Maximum Ratings: Collector
* Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE359
NTE
98.18 KB
Silicon npn transistor rf & microwave transistor.
📁 Related Datasheet
NTE350 - Silicon NPN Transistor
(NTE)
NTE350 Silicon NPN Transistor RF Power Amp, Driver
Description: The NTE350 is a silicon NPN transistor in a T72H type package designed primarily for u.
NTE351 - Silicon NPN Transistor
(NTE)
NTE351 Silicon NPN Transistor RF Power Amp, Driver
Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for u.
NTE352 - Silicon Complementary Transistors
(NTE)
NTE352 Silicon NPN Transistor RF Power Amp, Driver
Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for us.
NTE353 - Silicon NPN Transistor
(NTE)
NTE353 Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz
Description: The NTE353 is designed for 12.5 Volt VHF large–signal amplifier applicatio.
NTE354 - Silicon NPN Transistor
(NTE)
NTE354 Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz
Description: The NTE354 is designed for 12.5 Volt VHF large–signal amplifier applicati.
NTE355 - Silicon NPN Transistor
(NTE)
NTE355 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz
Description: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applicati.
NTE30 - Silicon Complementary Transistors
(NTE)
.
NTE300 - Silicon Complementary Transistors Audio Power Amplifier
(NTE)
NTE300 (NPN) & NTE307 (PNP) Silicon Complementary Transistors Audio Power Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) .
