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NTE38 - Silicon Complementary Transistors

Datasheet Summary

Description

The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high speed switching and linear amplifier applications for high

voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.

Features

  • D Collector.
  • Emitter Sustaining Voltage: NTE38: VCEO(sus) = 350V @ IC = 200mA NTE175: VCEO(sus) = 300V @ IC = 200mA D Second Breakdown Collector Current: NTE38 IS/b = 875mA @ VCE = 40V NTE175 IS/b = 350mA @ VCE = 100V D Usable DC Current Gain to 2.0Adc Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO NTE38.
  • . . . . 350V NTE175.

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Datasheet Details

Part number NTE38
Manufacturer NTE
File Size 29.08 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE38 Datasheet
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NTE38 (PNP) & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: D Collector–Emitter Sustaining Voltage: NTE38: VCEO(sus) = 350V @ IC = 200mA NTE175: VCEO(sus) = 300V @ IC = 200mA D Second Breakdown Collector Current: NTE38 IS/b = 875mA @ VCE = 40V NTE175 IS/b = 350mA @ VCE = 100V D Usable DC Current Gain to 2.0Adc Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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