NTE470 - Silicon NPN Transistor

Product Overview

NTE

NTE470 Silicon NPN Transistor by NTE - Datasheet Preview — Datasheet preview – NTE470

Datasheet Details

Part number	NTE470
Manufacturer	NTE
File Size	24.07 KB
Description	Silicon NPN Transistor
Datasheet	NTE470 Datasheet
Additional preview pages of the NTE470 datasheet.

Product details

Description

The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high power linear amplifier from 2.0 to 30MHz.

Features

D Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficiency = 40% D Intermodulation Distortion @ 100W (PEP): IMD =.
30dB Min D 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 20V Collector.
Base Voltage, VCBO.

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Published: May 9, 2005 |