NTE488 Datasheet, Transistor, NTE

NTE488 Features

• Transistor D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz D TO39 Metal Sealed Package for High Reliability D Emitter Electrode is Connected Electrically to the Case Applicat

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NTE488

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NTE

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📄 Datasheet

Description:

Silicon npn transistor. The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radi

NTE488 Application

• Applications Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz D TO39 Metal Sealed Package for High Reliability D Emit

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