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2708AF BU2708AF

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Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL .
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Features

* exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation. Designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter v

Applications

* These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to full

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