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BUK7E2R7-30B N-channel TrenchMOS standard level FET

BUK7E2R7-30B Description

BUK7E2R7-30B N-channel TrenchMOS standard level FET Rev.04 * 7 June 2010 Product data sheet 1.Product profile 1.1 General .
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

BUK7E2R7-30B Features

* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitable for standard level gate drive sources

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