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BUK9Y22-30B N-Channel MOSFET

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Description

BUK9Y22-30B N-channel TrenchMOS logic level FET Rev.04 * 7 April 2010 Product data sheet 1.Product profile 1.1 General .
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

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Features

* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitable for logic level gate drive sources

BUK9Y22-30B Distributors

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BUK9Y22-30B N-Channel MOSFET NXP Semiconductors
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