BUK9Y30-75B Datasheet - NXP Semiconductors

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BUK9Y30-75B N-channel TrenchMOS logic level FET

www.DataSheet4U.com BUK9Y30-75B N-channel TrenchMOS™ logic level FET M3D748 Rev.01 * 14 July 2004 Product data 1.Product proﬁle 1.1 Desc.
N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

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Datasheet Details

Part number:

BUK9Y30-75B

Manufacturer:

NXP ↗ Semiconductors

File Size:

129.97 KB

Description:

N-channel TrenchMOS logic level FET

Applications

* s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 89 mJ s ID ≤ 30 A s RDSon = 25 mΩ (typ) s Ptot ≤ 75 W. 2. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK) simpliﬁed outline

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BUK9Y30-75B N-channel TrenchMOS logic level FET NXP Semiconductors

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