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NX1029X MOSFET

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Description

SO T6 NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev.1 * 12 August 2011 Product data sheet 1.Product profile 1.1 General de.
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic p.

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Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)

Applications

* Level shifter
* Power supply converter
* Load switch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source voltage gate-source voltage drain curre

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NX1029X MOSFET NXP Semiconductors
NXP Semiconductors NX1029X-like datasheet