PHX18NQ11T - N-channel TrenchMOS standard level FET

Datasheet Summary

Description

N-channel enhancement mode ﬁeld-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology.

Features

s Low on-state resistance s Isolated mounting base s Fast switching s Low thermal resistance 1.3.

NXP Semiconductors

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Datasheet Details

Part number	PHX18NQ11T
Manufacturer	NXP Semiconductors
File Size	131.95 KB
Description	N-channel TrenchMOS standard level FET
Datasheet	PHX18NQ11T Datasheet
Additional preview pages of the PHX18NQ11T datasheet.

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Full PDF Text Transcription

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PHX18NQ11T N-channel TrenchMOS™ standard level FET M3D308 Rev. 01 — 13 February 2004 Product data 1. Product proﬁle 1.1 Description www.DataSheet4U.com N-channel enhancement mode ﬁeld-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology. 1.2 Features s Low on-state resistance s Isolated mounting base s Fast switching s Low thermal resistance 1.3 Applications s DC-to-DC converters s Switched-mode power supplies 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 31.2 W s ID ≤ 12.5 A s RDSon ≤ 90 mΩ 2.

Published: Oct 28, 2008 |