PMCPB5530X Datasheet - NXP Semiconductors

PMCPB5530X, MOSFET

PMCPB5530X 020 -6 20 V, complementary Trench MOSFET Rev.1 * 26 June 2012 Product data sheet 1.Product profile 1.1 General .
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device.

Features

* Very fast switching
* Trench MOSFET technology
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Applications

* Charging switch for portable devices
* DC-to-DC converters
* Small brushless DC motor drive
* Power management in battery-driven portables
* Hard disc and computing power management 1.4 Quick reference data Table 1. Symbol RDSon Quick reference data Parameter drain-source on-s

PMCPB5530X-NXPSemiconductors.pdf