PMN80XP Datasheet - NXP Semiconductors

PMN80XP, MOSFET

SO T4 57 PMN80XP 20 V, single P-channel Trench MOSFET Rev.1 * 8 May 2012 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET te.

Features

* RDSon specified at 1.8 V operation
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 2

PMN80XP-NXPSemiconductors.pdf