PMN80XP MOSFET

NXP Semiconductors

Description

SO T4 57 PMN80XP 20 V, single P-channel Trench MOSFET Rev.1 * 8 May 2012 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET te.

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Datasheet Specifications

Part number: PMN80XP
Manufacturer: NXP ↗ Semiconductors
File Size: 932.11 KB
Datasheet: PMN80XP-NXPSemiconductors.pdf
Description: MOSFET

Features

* RDSon specified at 1.8 V operation
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 2

PMN80XP Distributors

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PMN80XP MOSFET NXP Semiconductors

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