PMPB12UN 20V single N-channel Trench MOSFET

NXP Semiconductors

Description

PMPB12UN 6 July 2012 20 V single N-channel Trench MOSFET Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PMPB12UN
Manufacturer: NXP ↗ Semiconductors
File Size: 230.41 KB
Datasheet: PMPB12UN-NXPSemiconductors.pdf
Description: 20V single N-channel Trench MOSFET

Features

* Trench MOSFET technology
* Very fast switching
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Exposed drain pad for excellent thermal conduction

Applications

* Charging switch for portable devices
* DC-to-DC converters
* Power management in battery-driven portables
* Hard disk and computing power management 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-so

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20V single N-channel Trench MOSFET NXP Semiconductors

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