* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications
* DC-to
PSMN011-30YLC Datasheet (232.62 KB)
PSMN011-30YLC
NXP ↗ Semiconductors
232.62 KB
Mosfet.
LF PA K
PSMN011-30YLC
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 3
* 24 October 2011 Product data she.
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